Abstract: A dry etching technology for 1-µm VLSI has been developed. This technology led to successful fabrication of a 1-µm 256-kbit MOS RAM using electon-beam direct writing and ...

The triboelectric layer of the S-TENG-CGG was fabricated through a reactive ion etching process with a metal shadow mask with grated structure. In the etched region, the nylon film, originally ...

Abstract: The etch dynamics of low-density undoped silica glass oxide (USG) and Si-rich SiN x:H thin films in a 25-wafer batch vapor HF tool operating at low etching pressure were studied. Up to ...

We report the fabrication of nanoporous silicon (nPSi) electrodes via electrochemical etching to form a porous Si layer with controllable thickness and pore size. Varying the etching time and ...