State Key Laboratory of Marine Resource Utilization in South China Sea, School of Materials Science and Engineering, Hainan University, Haikou 570228,P. R. China ...

The first of several GaN transistors with integrated Schottky diode is the 100 V 1.5 mΩ transistor in a 3 x 5 mm PQFN package. Engineering samples and target datasheet are available upon request.

Infineon Technologies AG has announced the release of the world’s first industrial-grade gallium nitride (GaN) transistor family featuring an integrated Schottky diode. The new CoolGaN Transistor G5 ...

Infineon’s CoolGaN™ Transistors with integrated Schottky diode enhance power system performance by minimizing dead time-related losses. Infineon Technologies AG has launched the world’s first gallium ...

P-FETs are like PNP transistors, too – the gate pin of a P-FET needs to have lower voltage than the source pin, of course, exceeding Vgs; in P-FET datasheets, Vgs is shown as a negative number ...